DR. WILLIAM R. BANDY, PH.D.

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2406 Bell Branch Road  410-703-5115

Gambrills, MD 21504-2125  

 

 

PROFESSIONAL EXPERIENCE

Dr. Bandy joined the National Security Agency in 1967, and spent his career in all aspects of microelectronics, including integrated circuit design, fabrication, and test. He started and ran the first in-house fabrication facility in the mid 70’s. In 1985 he was detailed to DARPA where he managed a $30M/year microelectronics research program that encompassed projects at over 20 research institutions in the areas of computer-aided design of electrical and mechanical systems, computer-aided manufacturing, and technology infrastructure. His tour was extended in 1988 to serve as the first program manager of the newly formed $200M/year SEMATECH industry and government consortium. In 1989 he was designated Executive Director of the National Advisory Committee on Semiconductors, a presidential committee mandated by Congress to study the state of the U.S. semiconductor industry and to make recommendations. In 1990 he returned to the NSA to become Director of the Microelectronics Research Laboratory. In 1999 he retired from NSA and co-founded Matrics Technology Systems, Inc., for the development and production of low-cost, high-performance Radio Frequency Identification (RFID) tag technology and product. Matrics was bought by Symbol Technologies, Inc. in 2004 for $230M. He left Symbol in May 2006 to co-found Innurvation, which is developing innovative technologies for swallow-able diagnostic capsules. In May 2014 he co-founded Matrics2 LLC for development of a massively parallel integrated circuit assembly system for high-volume production of very low cost Near Field Communication (NFC) tags for the Internet of Everything market.

 

EDUCATION 

University of Maryland, College Park, Maryland

Ph.D., Physics, 1974 

University of Oklahoma, Norman, Oklahoma 

M.S., Electrical Engineering, 1967 

B.S., With Distinction (third in class), Electrical Engineering, 1966 

 

PROFESSIONAL ORGANIZATIONS

Institute of Electrical and Electronic Engineers

American Physical Society

 

AWARDS 

ERNST & YOUNG Entrepreneur of the year 2004 Finalist

NSA Distinguished Service Award 

University of Maryland Department of Physics Distinguished Alumnus Award 2012

 

PUBLICATIONS AND PRESENTATIONS

  1. R. Bandy, The Effect of Surface Nucleation on the Microwave Impedance of Type II Superconductors (Master's Thesis, University of Oklahoma, February 1967)
  2. R. Bandy, "Effect of Free Energy Approximations on Superconducting Surface Sheath Calculations," Physical Review Letters (June 1967)
  3. R. Bandy, "Tight Binding Green's Function Calculation of Electron Tunneling" (presented at American Physical Society Meeting, April 1974)
  4. R. Bandy, A Tight-Binding Green's Function Calculation for Electron Tunneling (Doctoral Dissertation, University of Maryland, December 1974)
  5. R. Bandy, H. C. Lin and D. P. Kokalis, "Modeling of Short Channel MOS Transistors" (presented by H. C. Lin at 7th Pittsburgh Conference on Modeling and Simulation, April 1976)
  6. R. Bandy and A. Glick, "Tight-Binding Green's Function Calculation of Electron Tunneling I: One-Dimensional Two-Band Model," Physics Review (April 1976)
  7. R. Bandy and A. Glick," Tight-Binding Green's Function Calculation of Electron Tunneling: II Diagonal Disorder in the One-Dimensional Two-Band Model," Physics Review (September 1976)
  8. R. Bandy and D. P. Kokalis, "A Simple Approach for Accurately Modeling the Threshold Voltage of Short-Channel MOST's," Solid State Electronics (August 1977)
  9. T. Jerdonek and W. R. Bandy, "Important Second Order Effects in the Theory of Operation of the N-Channel Deep-Depletion SOS/MOSFET" (presented by R. T. Jerdonek at SOS Workshop, September 1977).
  10. T. Jerdonek, W. R. Bandy and H. C. Lin, "Weak Accumulation Operation of the N-Channel Deep-Depletion SOS/MOSFET" (presented by R. T. Jerdonek at IEDM Conference, December 1977)
  11. T. Jerdonek and W. R. Bandy, "Velocity Saturation Effects in N-Channel Deep-Depletion SOS/MOSFETS," Electron Devices (August 1978)
  12. T. Jerdonek and W. R. Bandy, "Modeling the Operation of the N-Channel Deep-Depletion SOS/MOSFET," Electron Devices (August 1978)
  13. Birnbaum, R. T. Jerdonek and W. R. Bandy, "A Model for the Sub-Micron N-Channel Deep-Depletion SOS/MOSFET," Electron Devices (September 1980)
  14. R. Bandy, developmental ed. 1989.A Strategic Industry at Risk:A Report to the President and the Congress from the National Advisory Committee on Semiconductors 
  15. R. Bandy, developmental ed. 1990.Preserving the Vital Base, America's Semiconductor Materials and Equipment Industry:A Report of the National Advisory Committee on Semiconductors 

W.R. Bandy, developmental ed. 1990. Capital Investment in Semiconductors, The Lifeblood of the U.S. Semiconductor Industry: A Report of the National Advisory Committee on Semiconductors 

W.R. Bandy and R.S. Winton, "A New Approach for Modeling the MOSFET Using a Simple, Continuous

Analytical Expression for Drain Conductance which Includes Velocity Saturation in a Fundamental Way", IEEE Transaction on Computer-Aided Design (May 1996) 

  1. Okunev, M. Arneson, W. Bandy, R. Davenport, B. Jamieson, K. Powell, W. Shanks, A. Trivelli, "Acoustic Intra-Body Data Transmission", submitted to IEEE Communication Magazine, and published on Innurvation.com website

 

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